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引用次数: 0
摘要
基于SiGe-OI (Silicon Germanium on Insulator)材料，建立了SiGe-OI电光调制器，并研究了PIN电调制结构。分析了电光调制器载流子注入浓度随结构参数的变化，包括有源区掺杂浓度、有源区宽度、有源区与波导之间宽度、Ge含量等参数，并对器件结构参数进行优化。与SOI (Silicon on Insulator)电光调制器注入浓度相比，在相同调制条件下，SiGe-OI电光调制器具有更高的载流子注入效率。因此，可以有效地降低调制电压和调制功率。
Research on carrier injection efficiency of SiGe-OI electro-optic modulator
Based on SiGe-OI (Silicon Germanium on Insulator) material, SiGe-OI electro-optic modulator is established, and PIN electrical modulation structure has been researched. The carrier injection concentration of electro-optical modulator with structure parameters, including the doping concentration of active region, the width of active region, the width between active region and waveguide, Ge content and the other parameters are analyzed, and the device structure parameters are optimized. Compared with SOI (Silicon on Insulator) electro-optic modulator injection concentration, SiGe-OI electro-optic modulator has higher carrier injection efficiency at the same modulation conditions. Accordingly, modulation voltage and modulation power can be effectively reduced.
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