{"title":"考虑老化误差的存储器产率和寿命估计","authors":"Dae-Hyun Kim, L. Milor","doi":"10.1109/IIRW.2015.7437085","DOIUrl":null,"url":null,"abstract":"A memory is a high-density device with low cost per bit. Denser memories are likely to contain more errors. Replacing such errors requires repair schemes with good cells for the yield enhancement of a memory. The yield of a memory, therefore, should be calculated considering the repair scheme that a memory system has incorporated. In this paper, we propose a methodology that estimates the yield and the lifetime of a memory with various failure mechanisms and repair schemes of a memory. In a case study of aging errors in a 2Gb DDR3 SDRAM, we demonstrate the feasibility of our yield and lifetime estimation with various redundancy combinations.","PeriodicalId":120239,"journal":{"name":"2015 IEEE International Integrated Reliability Workshop (IIRW)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Memory yield and lifetime estimation considering aging errors\",\"authors\":\"Dae-Hyun Kim, L. Milor\",\"doi\":\"10.1109/IIRW.2015.7437085\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A memory is a high-density device with low cost per bit. Denser memories are likely to contain more errors. Replacing such errors requires repair schemes with good cells for the yield enhancement of a memory. The yield of a memory, therefore, should be calculated considering the repair scheme that a memory system has incorporated. In this paper, we propose a methodology that estimates the yield and the lifetime of a memory with various failure mechanisms and repair schemes of a memory. In a case study of aging errors in a 2Gb DDR3 SDRAM, we demonstrate the feasibility of our yield and lifetime estimation with various redundancy combinations.\",\"PeriodicalId\":120239,\"journal\":{\"name\":\"2015 IEEE International Integrated Reliability Workshop (IIRW)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Integrated Reliability Workshop (IIRW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2015.7437085\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2015.7437085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Memory yield and lifetime estimation considering aging errors
A memory is a high-density device with low cost per bit. Denser memories are likely to contain more errors. Replacing such errors requires repair schemes with good cells for the yield enhancement of a memory. The yield of a memory, therefore, should be calculated considering the repair scheme that a memory system has incorporated. In this paper, we propose a methodology that estimates the yield and the lifetime of a memory with various failure mechanisms and repair schemes of a memory. In a case study of aging errors in a 2Gb DDR3 SDRAM, we demonstrate the feasibility of our yield and lifetime estimation with various redundancy combinations.