{"title":"格子白- rgb彩色LOFIC CMOS图像传感器","authors":"Shun Kawada, Shin Sakai, Y. Tashiro, S. Sugawa","doi":"10.1109/ASPDAC.2010.5419870","DOIUrl":null,"url":null,"abstract":"We succeeded in developing a checkered White-RGB color CMOS image sensor based on a lateral overflow integration capacitor (LOFIC) architecture. The LOFIC CMOS image sensor with a 1/3.3-inch optical format, 1280<sup>H</sup> × 480<sup>V</sup> pixels, 4.2-µm effective pixel pitch along with 45° direction was designed and fabricated through 0.18-µm 2-Poly 3-Metal CMOS technology with buried pinned photodiode (PD) process. The image sensor has achieved about 108-µV/ē high conversion gain and about 102-dB dynamic range (DR) performance in one exposure.","PeriodicalId":152569,"journal":{"name":"2010 15th Asia and South Pacific Design Automation Conference (ASP-DAC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Checkered White-RGB Color LOFIC CMOS image sensor\",\"authors\":\"Shun Kawada, Shin Sakai, Y. Tashiro, S. Sugawa\",\"doi\":\"10.1109/ASPDAC.2010.5419870\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We succeeded in developing a checkered White-RGB color CMOS image sensor based on a lateral overflow integration capacitor (LOFIC) architecture. The LOFIC CMOS image sensor with a 1/3.3-inch optical format, 1280<sup>H</sup> × 480<sup>V</sup> pixels, 4.2-µm effective pixel pitch along with 45° direction was designed and fabricated through 0.18-µm 2-Poly 3-Metal CMOS technology with buried pinned photodiode (PD) process. The image sensor has achieved about 108-µV/ē high conversion gain and about 102-dB dynamic range (DR) performance in one exposure.\",\"PeriodicalId\":152569,\"journal\":{\"name\":\"2010 15th Asia and South Pacific Design Automation Conference (ASP-DAC)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-01-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 15th Asia and South Pacific Design Automation Conference (ASP-DAC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASPDAC.2010.5419870\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 15th Asia and South Pacific Design Automation Conference (ASP-DAC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASPDAC.2010.5419870","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We succeeded in developing a checkered White-RGB color CMOS image sensor based on a lateral overflow integration capacitor (LOFIC) architecture. The LOFIC CMOS image sensor with a 1/3.3-inch optical format, 1280H × 480V pixels, 4.2-µm effective pixel pitch along with 45° direction was designed and fabricated through 0.18-µm 2-Poly 3-Metal CMOS technology with buried pinned photodiode (PD) process. The image sensor has achieved about 108-µV/ē high conversion gain and about 102-dB dynamic range (DR) performance in one exposure.
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