温度脉冲工作模式下SnO/sub 2/-Ag薄膜的R-T关系

Xiaoguang Gao, Jianping Li, Xiuli He, J. Jia
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引用次数: 0

摘要

采用磁控溅射法制备了SnO/sub - 2/-Ag薄膜。研究了膜对H/sub 2/S的敏感特性,并在温度脉冲模式和简单温度斜坡模式下测量了膜的R-T关系,以了解膜的敏感特性。利用实验结果讨论了Ag添加剂对膜的R-T关系和敏感性能的影响。薄膜电阻的变化表明银促进了薄膜表面的化学过程。在温度脉冲工作模式下测量的R-T关系可以用来理解SnO/sub 2/-Ag薄膜的传感特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
R-T relation of SnO/sub 2/-Ag thin film in temperature pulsed operation mode
The SnO/sub 2/-Ag thin film was prepared by magnetron sputtering on the Si-based membrane substrate embedded with a platinum micro heater. The sensitive properties of the film to H/sub 2/S were investigated, and the R-T relation was measured in temperature pulsed operation mode and in simple temperature ramp mode in order to understand the sensitive properties. The results are used to discuss the effect of Ag additive on the R-T relation and sensitive properties of the film. The variation of film resistance shows that the silver promotes the chemical processes on the surface of films. The R-T relation measured in temperature pulsed operation mode can be used to understand the sensing properties of SnO/sub 2/-Ag film.
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