教育用集成热光加热器硅光子电路的制造

Venkatesh Deenadayalan, P. Thomas, S. Preble
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引用次数: 1

摘要

硅光子学正在革新计算、通信和传感系统。因此,越来越需要教授集成光子设计、制造、测试和封装原理。本文的重点是改进硅波导的制造工艺,使其与大多数大学洁净室(i线光刻)兼容。此外,我们建立了一个简单的集成金属加热器的工艺,以实现硅光子电路的热光调谐。通过使用PEVCD TEOS和碳硬掩膜进行广泛的蚀刻测试,对工艺进行了优化。PECVD TEOS容易受到侵蚀,而碳被证明更有弹性,被选为最好的硬掩膜材料。通过调整BARC和抗蚀剂层的涂层厚度,提高了光刻性能。通过简单的固化工艺,提高了光刻胶的耐蚀性。在无源元件制造之后,添加金属加热器对波导进行热调谐。这种优化的制造工艺是在一个兼容CMOS的学术制造设备上用365纳米i线光刻技术执行的。由于镍铬合金的高电阻率以及触点的低电阻性钼,双层金属提升工艺采用镍铬合金作为加热金属。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication of Silicon photonic circuits with integrated thermo-optic heaters for education
Silicon photonics is revolutionizing computing, communication and sensing systems. As a result, there is a growing need to teach integrated photonic design, fabrication, testing and packaging principles. The focus of this paper is on an improved fabrication process for silicon waveguides that are compatible with most university cleanrooms (i-line photolithography) Furthermore, we establish a simple process for integrating metal heaters to realize thermo-optic tuning of silicon photonic circuits. The process optimization was performed by running extensive etch tests with PEVCD TEOS and carbon hard masks. PECVD TEOS was prone to erosion, while carbon proved more resilient and was chosen as the best hard mask material. The Photolithography was improved by adjusting the coating thickness of the BARC and resist layer. Etch resistance of the photoresist was improved by a simple curing process. The passive component fabrication is followed by addition of metal heater to thermally tune the waveguides. This optimized fabrication process is executed in a CMOS compatible academic fabrication facility with 365 nm i-line lithography. The bi-layer metal lift off process has Nichrome alloy as the heater metal because of this high electrical resistivity along with less resistive molybdenum for contacts.
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