银纳米线上ZnO原子层沉积的新应用

Shuye Zhang, Xu Liu, Tiesong Lin, P. He
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引用次数: 0

摘要

透明电极是光电器件的关键部件。目前,氧化铟锡(ITO)已被广泛用于透明电极。然而,银纳米线(NWs)是一个很好的替代传统ITO的候选材料。为了提高银纳米线电极的稳定性,采用原子层沉积(ALD)方法在银纳米线电极表面沉积纳米级厚度的ZnO。ALD是一种以单原子膜的形式在衬底上逐层沉积材料的方法。由于纳米线表面涂覆ZnO,整体形貌良好,无熔合现象。通过沉积含片电阻的50 nm厚度的ZnO层,可以显著提高银纳米线电极的热稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Atomic Layer of ZnO Deposition on Ag Nanowires for Novel Electrical Applications
Transparent electrode is the key component of optoelectronic devices. Nowadays, indium tin oxide (ITO) has been widely used for transparent electrode. However, Ag nanowires (NWs) are a good alternative candidate to replace the conventional ITO. In order to improve the stability of silver nanowires electrode, ZnO with nanometer size thickness is deposited on the surface of silver nanowires electrode by atomic layer deposition (ALD) method which is a method of depositing material on a substrate layer by layer in the form of a single atomic film. As the surface of the nanowires are coated with ZnO, the overall morphology is good without fusing phenomenon. The thermal stability of the silver nanowires electrode can be significantly enhanced by depositing 50 nm thickness ZnO layer including the sheet resistances.
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