{"title":"N/sub 2/ o退火NH/sub 3/ o处理6H-SiC MOS电容器的界面性能","authors":"P. Lai, J. Xu, C. Chan, Y. Cheng","doi":"10.1109/HKEDM.1999.836405","DOIUrl":null,"url":null,"abstract":"Effects of pre-oxidation NH/sub 3/ treatment and post-oxidation N/sub 2/O annealing on n-SiC/SiO/sub 2/ interface properties were investigated as compared to conventional thermally-oxidized devices. It was found that NH/sub 3/ treatment before oxidation is beneficial for the interface-quality improvement. Moreover, the combination of NH/sub 3/ treatment with N/sub 2/O annealing can further harden the SiC/SiO/sub 2/ interface, enhancing its resistance against high-field and high-temperature stressings.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"356 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interface properties of N/sub 2/O-annealed NH/sub 3/-treated 6H-SiC MOS capacitor\",\"authors\":\"P. Lai, J. Xu, C. Chan, Y. Cheng\",\"doi\":\"10.1109/HKEDM.1999.836405\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effects of pre-oxidation NH/sub 3/ treatment and post-oxidation N/sub 2/O annealing on n-SiC/SiO/sub 2/ interface properties were investigated as compared to conventional thermally-oxidized devices. It was found that NH/sub 3/ treatment before oxidation is beneficial for the interface-quality improvement. Moreover, the combination of NH/sub 3/ treatment with N/sub 2/O annealing can further harden the SiC/SiO/sub 2/ interface, enhancing its resistance against high-field and high-temperature stressings.\",\"PeriodicalId\":342844,\"journal\":{\"name\":\"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)\",\"volume\":\"356 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1999.836405\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1999.836405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interface properties of N/sub 2/O-annealed NH/sub 3/-treated 6H-SiC MOS capacitor
Effects of pre-oxidation NH/sub 3/ treatment and post-oxidation N/sub 2/O annealing on n-SiC/SiO/sub 2/ interface properties were investigated as compared to conventional thermally-oxidized devices. It was found that NH/sub 3/ treatment before oxidation is beneficial for the interface-quality improvement. Moreover, the combination of NH/sub 3/ treatment with N/sub 2/O annealing can further harden the SiC/SiO/sub 2/ interface, enhancing its resistance against high-field and high-temperature stressings.
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