Vijay Khawshe, K. Vyas, Renu Rangnekar, Prateek Goyal, V. Krishna, K. Prabhu, P. Venkatesan, L. Raghavan, Rajkumar Palwai, M. Thrivikraman, K. Desai, Abhijit Abhyankar
{"title":"2.4Gbps-4.8Gbps XDR-DRAM io链路","authors":"Vijay Khawshe, K. Vyas, Renu Rangnekar, Prateek Goyal, V. Krishna, K. Prabhu, P. Venkatesan, L. Raghavan, Rajkumar Palwai, M. Thrivikraman, K. Desai, Abhijit Abhyankar","doi":"10.1109/VLSI.Design.2009.65","DOIUrl":null,"url":null,"abstract":"This paper focuses on the design of a 2.4Gbps to 4.8Gbps link developed in TSMC65nmG+ technology, for the high speed and high throughput interface between XDR™ (Extreme data rate) DRAM and ASIC. Applications such as HDTV and high end graphics require high bandwidth interface between controllers and memory. This XDR I/O (XIO) link which is integrated in the controller, interfaces with the XDR™ DRAM and provides the very high per pin bandwidth. To maintain a constant transmit swing the link supports automatic calibration for the on-die termination (ODT) and driver circuit bias. The channel timing between, ASIC pin to XDR-DRAM pin, is calibrated for all the individual pins to de-skew any channel electrical timing differences to align the data transfer during Memory Read and Writes. This calibration is done periodically to maintain constant timing margin throughout the operation. The self biased [1] regulated PLL dual loop architecture based on [2] is used which minimizes the clock jitter and enables high speed operation. A novel programmable Voltage Control Oscillator is used here to work at wide range of frequencies. The cell with 8bit wide data bus and 16bit wide command bus, consumes 520mW at 4.0Gbps.","PeriodicalId":267121,"journal":{"name":"2009 22nd International Conference on VLSI Design","volume":"266 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 2.4Gbps-4.8Gbps XDR-DRAM I/O (XIO) Link\",\"authors\":\"Vijay Khawshe, K. Vyas, Renu Rangnekar, Prateek Goyal, V. Krishna, K. Prabhu, P. Venkatesan, L. Raghavan, Rajkumar Palwai, M. Thrivikraman, K. Desai, Abhijit Abhyankar\",\"doi\":\"10.1109/VLSI.Design.2009.65\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper focuses on the design of a 2.4Gbps to 4.8Gbps link developed in TSMC65nmG+ technology, for the high speed and high throughput interface between XDR™ (Extreme data rate) DRAM and ASIC. Applications such as HDTV and high end graphics require high bandwidth interface between controllers and memory. This XDR I/O (XIO) link which is integrated in the controller, interfaces with the XDR™ DRAM and provides the very high per pin bandwidth. To maintain a constant transmit swing the link supports automatic calibration for the on-die termination (ODT) and driver circuit bias. The channel timing between, ASIC pin to XDR-DRAM pin, is calibrated for all the individual pins to de-skew any channel electrical timing differences to align the data transfer during Memory Read and Writes. This calibration is done periodically to maintain constant timing margin throughout the operation. The self biased [1] regulated PLL dual loop architecture based on [2] is used which minimizes the clock jitter and enables high speed operation. A novel programmable Voltage Control Oscillator is used here to work at wide range of frequencies. The cell with 8bit wide data bus and 16bit wide command bus, consumes 520mW at 4.0Gbps.\",\"PeriodicalId\":267121,\"journal\":{\"name\":\"2009 22nd International Conference on VLSI Design\",\"volume\":\"266 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 22nd International Conference on VLSI Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI.Design.2009.65\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 22nd International Conference on VLSI Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI.Design.2009.65","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
针对XDR™(Extreme data rate) DRAM与ASIC之间的高速高吞吐量接口,设计了一种采用TSMC65nmG+技术开发的2.4Gbps至4.8Gbps链路。高清电视和高端图形等应用需要控制器和存储器之间的高带宽接口。这种XDR I/O (XIO)链路集成在控制器中,与XDR™DRAM接口,并提供非常高的每引脚带宽。为了保持恒定的传输摆幅,该链路支持对片上终端(ODT)和驱动电路偏置的自动校准。ASIC引脚到XDR-DRAM引脚之间的通道时序,针对所有单个引脚进行校准,以消除任何通道电气时序差异,以便在存储器读写期间对齐数据传输。定期进行校准,以在整个操作过程中保持恒定的时间裕度。采用基于[2]的自偏置[1]稳压锁相环双环架构,最大限度地减少时钟抖动,实现高速运行。采用了一种新颖的可编程电压控制振荡器,工作频率范围广。单元具有8位宽数据总线和16位宽命令总线,在4.0Gbps下消耗520mW。
This paper focuses on the design of a 2.4Gbps to 4.8Gbps link developed in TSMC65nmG+ technology, for the high speed and high throughput interface between XDR™ (Extreme data rate) DRAM and ASIC. Applications such as HDTV and high end graphics require high bandwidth interface between controllers and memory. This XDR I/O (XIO) link which is integrated in the controller, interfaces with the XDR™ DRAM and provides the very high per pin bandwidth. To maintain a constant transmit swing the link supports automatic calibration for the on-die termination (ODT) and driver circuit bias. The channel timing between, ASIC pin to XDR-DRAM pin, is calibrated for all the individual pins to de-skew any channel electrical timing differences to align the data transfer during Memory Read and Writes. This calibration is done periodically to maintain constant timing margin throughout the operation. The self biased [1] regulated PLL dual loop architecture based on [2] is used which minimizes the clock jitter and enables high speed operation. A novel programmable Voltage Control Oscillator is used here to work at wide range of frequencies. The cell with 8bit wide data bus and 16bit wide command bus, consumes 520mW at 4.0Gbps.