取向聚酰亚胺薄膜的光电性能

1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena Pub Date : 1988-10-16 DOI:10.1109/CEIDP.1988.26322

W. Yin, H. Zhang

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引用次数: 0

摘要

测定了聚酰亚胺(PI)薄膜样品的稳态光电流。结果表明，PI薄膜的暗电流随拉伸比的变化而变化，但它们的稳定光电流几乎相同。此外，光电流的衰减曲线随拉伸比的变化有显著的变化。结果表明，拉伸或拉伸过程中结构的变化可能会引起陷阱结构的变化，从而影响拉伸后PI薄膜中的载流子输运。利用光激发电流的方法研究了拉伸PI膜引起的陷阱深度变化。还研究了线强度对光电导率的影响

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Photoelectrical properties of oriented polyimide films

The steady photocurrents of polyimide (PI) film samples were measured. It is shown that the dark currents of PI films vary with drawing ratios, but their steady photocurrents are almost the same. In addition, the decay curves of the photocurrents change significantly with drawing ratios. It is suggested that the variation of structure during drawing or stretching may give rise to the variation of the trap structures which affect carrier transport in drawn PI films. The method of photostimulated current is used to study the variation of trap depth resulting from stretching of drawn PI films. The effect of line intensity on photoconductivity is also investigated.<>

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1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena

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