M. Biedenbender, R. Lai, J. Lee, S. Chen, K. Tan, P. Liu, A. Freudenthal, D. Streit, B. Allen, H. Wang
{"title":"用于高产、高性能、低噪声、低功耗mmic的0.1 /spl μ m w波段HEMT生产工艺","authors":"M. Biedenbender, R. Lai, J. Lee, S. Chen, K. Tan, P. Liu, A. Freudenthal, D. Streit, B. Allen, H. Wang","doi":"10.1109/GAAS.1994.636994","DOIUrl":null,"url":null,"abstract":"We have developed a W-band HEMT MMIC process which has demonstrated reproducible high performance for both low noise and power amplifier designs. This paper presents the details of the fabrication process as well as device and circuit results from 69 wafers. Three-stage LNAs have demonstrated noise figure as low as 4.4 dB with gains as high as 27 dB from 92 to 96 GHz. The LNA RF lot yield was as high as 78%. The same process has demonstrated power amplifiers with output power of 19 dBm at 94 GHz, with RF yield of 37%.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"183 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"A 0.1 /spl mu/m W-band HEMT production process for high yield and high performance low noise and power MMICs\",\"authors\":\"M. Biedenbender, R. Lai, J. Lee, S. Chen, K. Tan, P. Liu, A. Freudenthal, D. Streit, B. Allen, H. Wang\",\"doi\":\"10.1109/GAAS.1994.636994\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a W-band HEMT MMIC process which has demonstrated reproducible high performance for both low noise and power amplifier designs. This paper presents the details of the fabrication process as well as device and circuit results from 69 wafers. Three-stage LNAs have demonstrated noise figure as low as 4.4 dB with gains as high as 27 dB from 92 to 96 GHz. The LNA RF lot yield was as high as 78%. The same process has demonstrated power amplifiers with output power of 19 dBm at 94 GHz, with RF yield of 37%.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"183 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636994\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636994","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.1 /spl mu/m W-band HEMT production process for high yield and high performance low noise and power MMICs
We have developed a W-band HEMT MMIC process which has demonstrated reproducible high performance for both low noise and power amplifier designs. This paper presents the details of the fabrication process as well as device and circuit results from 69 wafers. Three-stage LNAs have demonstrated noise figure as low as 4.4 dB with gains as high as 27 dB from 92 to 96 GHz. The LNA RF lot yield was as high as 78%. The same process has demonstrated power amplifiers with output power of 19 dBm at 94 GHz, with RF yield of 37%.
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