具有高PVR参数的AlAs/In/sub 0.53/Ga/sub 0.47/As/InP共振隧穿异质结构的MOVPE沉积

3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500) Pub Date : 1900-01-01 DOI:10.1109/WBL.2001.946600

K. Kosiel, L. Dobrzański, B. Majkusiak, A. Jasik

{"title":"具有高PVR参数的AlAs/In/sub 0.53/Ga/sub 0.47/As/InP共振隧穿异质结构的MOVPE沉积","authors":"K. Kosiel, L. Dobrzański, B. Majkusiak, A. Jasik","doi":"10.1109/WBL.2001.946600","DOIUrl":null,"url":null,"abstract":"The RT (Resonant Tunnelling) AIAs/Ino 53Ga 4.1As/l# heterostructure employed in our measurements was deposited on nominally (001) oriented I# S n+ (2x10 'cm )substrates The layer sequence was as follows (i) 600nm n+ InP.Si bottom contact layer (n=S~lO'*cm-~()i,i ) 600 nm nf Inos3Gao47As contact layer (n=5~10'*cm'~)(,i ii) 100 nm n In0 53Ga047As Si contact layer (n=l~lO'~cm''), (iv) 5nm undoped IQ s~Ga47As spacer layer, (v) 4 3nm undoped AlAs barrier layer, (vi) 5nm undoped In0 53Gao 47As quantum well layer, (vii) 4 3nm undoped AlAs barrier layer, (viii) 5nm undoped InossGao47As spacer layer, (ix) 100 nm n InoaGao47As.Si contact layer (n=l~lO\"cm~~(x)), 100 nm n+ I ~ I o ~ ~ G Qco~nt~acAt s layer (n=5x10'*cniJ) Undo ed LP MOVPE layers have typically not intentional n-type doping level of about 2 ~ 1 0 ' ~ c mTh~e ~sc heme of the epilayers design concerning our RTS (Resonant Tunnelling Structure).","PeriodicalId":315832,"journal":{"name":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MOVPE deposition of AlAs/In/sub 0.53/Ga/sub 0.47/As/InP resonant tunnelling heterostructure performing high PVR parameter\",\"authors\":\"K. Kosiel, L. Dobrzański, B. Majkusiak, A. Jasik\",\"doi\":\"10.1109/WBL.2001.946600\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The RT (Resonant Tunnelling) AIAs/Ino 53Ga 4.1As/l# heterostructure employed in our measurements was deposited on nominally (001) oriented I# S n+ (2x10 'cm )substrates The layer sequence was as follows (i) 600nm n+ InP.Si bottom contact layer (n=S~lO'*cm-~()i,i ) 600 nm nf Inos3Gao47As contact layer (n=5~10'*cm'~)(,i ii) 100 nm n In0 53Ga047As Si contact layer (n=l~lO'~cm''), (iv) 5nm undoped IQ s~Ga47As spacer layer, (v) 4 3nm undoped AlAs barrier layer, (vi) 5nm undoped In0 53Gao 47As quantum well layer, (vii) 4 3nm undoped AlAs barrier layer, (viii) 5nm undoped InossGao47As spacer layer, (ix) 100 nm n InoaGao47As.Si contact layer (n=l~lO\\\"cm~~(x)), 100 nm n+ I ~ I o ~ ~ G Qco~nt~acAt s layer (n=5x10'*cniJ) Undo ed LP MOVPE layers have typically not intentional n-type doping level of about 2 ~ 1 0 ' ~ c mTh~e ~sc heme of the epilayers design concerning our RTS (Resonant Tunnelling Structure).\",\"PeriodicalId\":315832,\"journal\":{\"name\":\"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WBL.2001.946600\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WBL.2001.946600","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在我们的测量中使用的RT(共振隧道)AIAs/Ino 53Ga 4.1As/l#异质结构沉积在名义上(001)取向的I# S n+ (2x10 'cm)衬底上，层序如下:(I) 600nm n+ InP。Si底部接触层(n=S~lO′*cm-~)()i,i) 600 nm nm nm inos3高47as接触层(n=5~10′*cm ~ ~)(，i ii) 100 nm n In0 53Ga047As Si接触层(n= 1 ~lO′~cm”)，(iv) 5nm未掺杂IQ S~ Ga47As间隔层，(v) 4 3nm未掺杂AlAs势垒层，(vi) 5nm未掺杂In0 53Gao 47As量子阱层，(vii) 4 3nm未掺杂AlAs势垒层，(viii) 5nm未掺杂inoss高47as间隔层，(ix) 100 nm n InoaGao47As。Si接触层(n= 1 ~lO”cm~~(x))， 100 nm n+ I ~ I ~ o~ ~ G Qco~nt~acAt s层(n=5 × 10’*cniJ) Undo ed LP MOVPE层的n型掺杂水平通常为2 ~ 10’~ cm~ e ~sc，这是我们设计的RTS(谐振隧道结构)涂层的典型特点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

MOVPE deposition of AlAs/In/sub 0.53/Ga/sub 0.47/As/InP resonant tunnelling heterostructure performing high PVR parameter

The RT (Resonant Tunnelling) AIAs/Ino 53Ga 4.1As/l# heterostructure employed in our measurements was deposited on nominally (001) oriented I# S n+ (2x10 'cm )substrates The layer sequence was as follows (i) 600nm n+ InP.Si bottom contact layer (n=S~lO'*cm-~()i,i ) 600 nm nf Inos3Gao47As contact layer (n=5~10'*cm'~)(,i ii) 100 nm n In0 53Ga047As Si contact layer (n=l~lO'~cm''), (iv) 5nm undoped IQ s~Ga47As spacer layer, (v) 4 3nm undoped AlAs barrier layer, (vi) 5nm undoped In0 53Gao 47As quantum well layer, (vii) 4 3nm undoped AlAs barrier layer, (viii) 5nm undoped InossGao47As spacer layer, (ix) 100 nm n InoaGao47As.Si contact layer (n=l~lO"cm~~(x)), 100 nm n+ I ~ I o ~ ~ G Qco~nt~acAt s layer (n=5x10'*cniJ) Undo ed LP MOVPE layers have typically not intentional n-type doping level of about 2 ~ 1 0 ' ~ c mTh~e ~sc heme of the epilayers design concerning our RTS (Resonant Tunnelling Structure).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500)

自引率

0.00%

发文量