无迟滞AlGaN/GaN mos - hfet al基电介质与AlGaN层界面反应的设计与控制

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988927

K. Watanabe, M. Nozaki, T. Yamada, S. Nakazawa, Y. Anda, M. Isliida, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe

{"title":"无迟滞AlGaN/GaN mos - hfet al基电介质与AlGaN层界面反应的设计与控制","authors":"K. Watanabe, M. Nozaki, T. Yamada, S. Nakazawa, Y. Anda, M. Isliida, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe","doi":"10.23919/ISPSD.2017.7988927","DOIUrl":null,"url":null,"abstract":"We have demonstrated hysteresis-free recessed gate AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET) by implementing AIGN gate insulator and selective AlGaN regrowth technique. High thermal stability and excellent electrical properties of AIGN gate dielectrics will provide a large process window for further optimization of AlGaN/GaN MOS-HFET.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"9 11","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and control of interface reaction between Al-based dielectrics and AlGaN layer for hysteresis-free AlGaN/GaN MOS-HFETs\",\"authors\":\"K. Watanabe, M. Nozaki, T. Yamada, S. Nakazawa, Y. Anda, M. Isliida, T. Ueda, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe\",\"doi\":\"10.23919/ISPSD.2017.7988927\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have demonstrated hysteresis-free recessed gate AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET) by implementing AIGN gate insulator and selective AlGaN regrowth technique. High thermal stability and excellent electrical properties of AIGN gate dielectrics will provide a large process window for further optimization of AlGaN/GaN MOS-HFET.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"9 11\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988927\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988927","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们通过实现AIGN栅极绝缘体和选择性AlGaN再生技术，展示了无迟滞的凹栅AlGaN/GaN金属氧化物半导体异质结场效应晶体管(MOS-HFET)。AIGN栅极介质的高热稳定性和优异的电学性能将为进一步优化AlGaN/GaN MOS-HFET提供一个大的工艺窗口。

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Design and control of interface reaction between Al-based dielectrics and AlGaN layer for hysteresis-free AlGaN/GaN MOS-HFETs

We have demonstrated hysteresis-free recessed gate AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET) by implementing AIGN gate insulator and selective AlGaN regrowth technique. High thermal stability and excellent electrical properties of AIGN gate dielectrics will provide a large process window for further optimization of AlGaN/GaN MOS-HFET.

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来源期刊

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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