硅掺杂聚乙烯薄膜中的反常光伏效应

D. Liu, S. H. Kim, F. Liu, C. Xu, K. Kao
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引用次数: 0

摘要

许多研究者已经研究了将聚合物或有机薄膜用于光伏或驻极体器件的可能性(1-5)。一般来说,如果光伏效应的机制是由肖特基势垒、pn结或p-i-n结构引起的,那么光伏器件中的开路光电压要远远小于材料能量间隙上的电位差。然而,当暴露在强光下时,一些薄膜形式的材料表现出很高的开路光电压,在某些情况下,光电压可能远远大于能量间隙上的电位差(6)。在聚合物中光电效应的研究中,大部分工作集中在光导上,而光伏效应的研究相对较少。近年来,我们在未掺入硅和掺入硅的聚乙烯薄膜中观察到一些反常的光电现象。本文的目的就是报道这些新的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Anomalous photovoltaic effects in polyethylene films incorporated with silicon
The possibility of using polymer or organic films for photovoltaic or electret devices has been investigated by many investigators(1–5). In general, the open-circuit photovoltage in photovoltaic devices is much smaller than the potential difference across the energy gap of the materials if the mechanism responsible for the photovoltaic effects is due either to Schottky barrier, or to p-n junction or p-i-n structure. However, some materials in thin film form exhibit a high open-circuit photovoltage when exposed to intense light and in some cases the photovoltage can be much large than the potential difference across the energy gap(6). In the studies of photoelectric effects in polymers most work is concentrated on photo-conduction, and comparatively little has been reported on photovoltaic effects. Recently we have observed some anomalous photoelectric phenomena in polyethylene films without and with silicon incorporation. The purpose of this paper is to report these new results.
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