Gerhard Klimeck, R. Lake, R. Bowen, W. Frensley, D. Blanks
{"title":"纳米电子建模(NEMO)","authors":"Gerhard Klimeck, R. Lake, R. Bowen, W. Frensley, D. Blanks","doi":"10.1109/DRC.1995.496267","DOIUrl":null,"url":null,"abstract":"The design of resonant tunneling based quantum devices requires accurate modeling of the quantum charge, resonant levels, and scattering effects in extremely complicated and varied potential profiles made possible by the great flexibility of heteroepitaxial based band engineering. Until now, such a device simulator did not exist. We unveil an alpha version of such a tool. It is planned for this tool to become available to the national R&D community. The tool solves the non-equilibrium Green function equations including realistic models for the important scattering mechanisms.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Nano electronic modelling (NEMO)\",\"authors\":\"Gerhard Klimeck, R. Lake, R. Bowen, W. Frensley, D. Blanks\",\"doi\":\"10.1109/DRC.1995.496267\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design of resonant tunneling based quantum devices requires accurate modeling of the quantum charge, resonant levels, and scattering effects in extremely complicated and varied potential profiles made possible by the great flexibility of heteroepitaxial based band engineering. Until now, such a device simulator did not exist. We unveil an alpha version of such a tool. It is planned for this tool to become available to the national R&D community. The tool solves the non-equilibrium Green function equations including realistic models for the important scattering mechanisms.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496267\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design of resonant tunneling based quantum devices requires accurate modeling of the quantum charge, resonant levels, and scattering effects in extremely complicated and varied potential profiles made possible by the great flexibility of heteroepitaxial based band engineering. Until now, such a device simulator did not exist. We unveil an alpha version of such a tool. It is planned for this tool to become available to the national R&D community. The tool solves the non-equilibrium Green function equations including realistic models for the important scattering mechanisms.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
