块状ZnWO4单晶插层制备二维晶体

A. I. Komonov, R. Soots, V. Shlegel, V. Prinz
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引用次数: 1

摘要

本文描述了一种从块状ZnWO4单晶中获得二维介电晶体的方法。该方法包括对ZnWO4单晶悬浮液的插层和超声处理的组合。首次获得了厚度为1.5 nm的ZnWO4晶体。插层主要通过晶体中的垂直缺陷进行。所得微晶的形状表现出单晶ZnWO4片段典型的明显的面状。所提出的技术使剥离单层晶体成为可能。本研究的结果对建立新的独立的二维薄膜异质结构是有用的。所获得的介质二维晶体悬浮液在柔性电子器件的二维印刷中具有广阔的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication of 2D Crystals by Intercalation of a Bulk ZnWO4 Single Crystals
In the present paper, we describe a method for obtaining two-dimensional dielectric crystal from bulk ZnWO4 single crystals. The method includes a combination of intercalation and an ultrasonic treatment of a suspension of ZnWO4 single crystals. For the first time, ZnWO4 crystals down to 1.5 nm thick were obtained. The intercalation is shown to proceed predominantly through vertical defects in the crystal. The shape of the microcrystals obtained exhibits a pronounced faceting typical of single-crystal ZnWO4 fragments. The technique proposed makes it possible to exfoliate monolayer crystals. The results of the present study can prove useful for creation of new free-standing two-dimensional film heterostructures. The obtained suspension of dielectric two-dimensional crystals is promising in two-dimensional printing for flexible electronics.
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