等离子体激活键合制备具有AlInAs-oxide约束结构的GaInAsP/SOI混合激光器

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-08-04 DOI:10.1109/ICIPRM.2016.7528752

Jun-ichi Suzuki, S. Inoue, Shovon M. D. Tanvir Hasan, Y. Hayashi, T. Amemiya, N. Nishiyama, S. Arai

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摘要

我们在硅平台上实现了具有AlInAs-oxide电流约束结构的GaInAsP/SOI混合fabry - p (FP)激光器。采用等离子体激活键合技术，采用湿氧化法氧化GaInAsP量子阱上方的AlInAs层。在未氧化条纹宽度为4.5 μm，腔长为500 μm的条件下，获得了阈值电流为50 mA，外差分量子效率为11%/facet。

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GaInAsP/SOI hybrid laser with AlInAs-oxide confinement structure fabricated by plasma activated bonding

We realized GaInAsP/SOI hybrid Fabry-Pérot (FP) laser with AlInAs-oxide current confinement structure for PICs on a silicon platform. Using hybrid wafers by a plasma activated bonding technique, an AlInAs layer just above GaInAsP quantum wells was oxidized by wet oxidation. A threshold current of 50 mA and an external differential quantum efficiency of 11%/facet were obtained with the unoxidezed stripe width of 4.5 μm and the cavity length of 500 μm.

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2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

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