硅衬底上生长的高性能GaN垂直沟槽mosfet

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930472

Renqiang Zhu, Huaxing Jiang, C. Tang, K. Lau

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引用次数: 0

摘要

在这项工作中，我们报告了在具有成本效益的6英寸Si衬底上生长的高性能GaN准垂直沟槽mosfet。在2 μm漂移层的硅基上制备的GaN沟槽mosfet具有低比导通电阻(RON,sp) 0.89 mΩ·cm2，最大漏极电流(ID,max)为4.1 kA/cm2, Vth为5.1 V，击穿电压(VBR)为320 V。

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High-Performance GaN Vertical Trench MOSFETs Grown on Si Substrate

In this work, we report high-performance GaN quasi-vertical trench MOSFETs grown on cost-effective 6-inch Si substrates. The fabricated GaN trench MOSFETs on Si, with a 2-μm drift layer, show a low specific ON-resistance (RON,sp) of 0.89 mΩ·cm², a high maximum drain current (ID,max) of 4.1 kA/cm², a large Vth of 5.1 V and a breakdown voltage (VBR) of 320 V, resulting from the combination of epilayer growth condition tuning and proper electric field management in the device.

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2022 Compound Semiconductor Week (CSW)

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