III-V GaAs基等离子体激光器(演示记录)

L. Lafone, Ngoc B. Nguyen, E. Clarke, P. Fry, R. Oulton
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引用次数: 0

摘要

等离子体是一个潜在的途径,新的和改进的光学器件。许多人预测亚波长光学系统将在未来集成电路的发展中至关重要,提供同时提高速度和降低功耗的唯一可行方法。实现这一潜力将取决于在既定半导体工业框架内利用等离子体效应的能力,为此,我们提出了基于III-V (GaAs)的表面等离子体激光平台,能够在高度聚焦的空间区域产生有效的激光。我们的设计利用悬挂板的砷化镓与金属槽印刷在顶部。在这里,狭缝的等离子体模式和平板的光子模式之间的杂化导致了具有约束和损耗的模式的形成,这种模式仅通过狭缝宽度的变化就可以调节。在以前的设计中,使用混合模式提供了较强的约束和相对较低的损耗,然而,打印金属槽的能力消除了与器件制造相关的随机性和蚀刻的要求,这可能会降低半导体的性能。确定性的制造工艺和使用大块砷化镓作为增益,使该器件适合实际应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
III-V GaAs based plasmonic lasers (Presentation Recording)
Plasmonics is a potential route to new and improved optical devices. Many predict that sub wavelength optical systems will be essential in the development of future integrated circuits, offering the only viable way of simultaneously increasing speed and reducing power consumption. Realising this potential will be contingent on the ability to exploit plasmonic effects within the framework of the established semiconductor industry and to this end we present III-V (GaAs) based surface plasmon laser platform capable of effective laser light generation in highly focussed regions of space. Our design utilises a suspended slab of GaAs with a metallic slot printed on top. Here, hybridisation between the plasmonic mode of the slot and the photonic mode of the slab leads to the formation of a mode with confinement and loss that can be adjusted through variation of the slot width alone. As in previous designs the use of a hybrid mode provides strong confinement with relatively low losses, however the ability to print the metal slot removes the randomness associated with device fabrication and the requirement for etching that can deteriorate the semiconductor’s properties. The deterministic fabrication process and the use of bulk GaAs for gain make the device prime for practical implementation.
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