S. Richter, S. Trellenkamp, M. Schmidt, A. Schafer, K. Bourdelle, Q. Zhao, S. Mantl
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Strained silicon nanowire array MOSFETs with high-k/metal gate stack
This paper presents experimental results on metal oxide semiconductor field-effect transistors (MOSFETs) featuring an array of 1000 trigated uniaxially strained nanowires with a cross-sections of 15 × 15 nm2 in combination with a HfO2/TiN gate stack. The high uniaxial strain along the wires reduces the band gap energy by approximately 140 meV and enhances the electron mobility. Ideal inverse subthreshold slopes of n- and p-channel devices of 60 (62) mV/dec at room temperature and Ion/Ioff ratios up to 1010 were obtained.
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