采用Ir-gate和ag -欧姆接触技术的热稳定增强模式和耗尽模式InAlAs/InGaAs/InP hemt的单片集成

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346855

Weifeng Zhao, Niu Jin, Guang Chen, Liang Wang, I. Adesida

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摘要

本文报道了一种基于Ir-gate和ag -欧姆接触技术的热稳定InAlAs/InGaAs/InP E/ d - hemt单片集成的新工艺。在钝化后，采用SiNx层对Ir-gate和ag -欧姆触点同时退火。两种栅极长度均为0.2 μ m的集成E/ d - hemt均具有优异的直流和射频特性

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Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies

This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Ag-ohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 mum demonstrated excellent DC and RF characteristics

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2006 International Electron Devices Meeting

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