40 gbit /s直接调制的紧凑节能DFB激光器的硅上集成

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI:10.1109/GROUP4.2015.7305935

S. Matsuo, T. Fujii, K. Takeda, H. Nishi, K. Hasebe, T. Kakitsuka

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引用次数: 0

摘要

结合直接键合和外延再生技术，证明了DFB激光器在SiO2/Si衬底上的非均匀集成。节能直接调制是通过减少腔长和增加光约束来实现的。

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On-silicon integration of compact and energy-efficient DFB laser with 40-Gbit/s direct modulation

Heterogeneous integration of a DFB laser on SiO2/Si substrate is demonstrated by combining direct bonding and epitaxial regrowth techniques. Energy-efficient direct modulation is achieved by reducing cavity length and increasing optical confinement.

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来源期刊

2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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