超高总电离剂量辐照下28nm大块mosfet的迁移率退化

Chun Zhang, F. Jazaeri, G. Borghello, S. Mattiazzo, Andrea Baschirotto, Christian Enz
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引用次数: 1

摘要

利用y函数方法,实验研究了总电离剂量高达1 Grad对28纳米CMOS工艺通道迁移率的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses
Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.
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