SOI平台微转移印刷InGaAs光电探测器

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141914

Hemalatha Muthuganesan, E. Mura, E. Pelucchi, C. Littlejohns, Xingzhao Yan, M. Banakar, Ying Tran, B. Corbett

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引用次数: 0

摘要

通过倏逝、光栅和边缘耦合将转移印刷InGaAs光电探测器集成在SOI上，其响应率分别为0.7、0.38和0.15 A/W，暗电流分别为48、47和400 nA，反向偏置为0.6 V。

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Micro-transfer printed InGaAs photodetector on SOI platform

Transfer-printed InGaAs photodetectors are integrated on SOI by evanescent, grating and edge coupling, exhibiting responsivities of 0.7, 0.38 and 0.15 A/W, with dark currents of 48,47 and 400 nA at 0.6 V reverse bias respectively.

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2023 IEEE Silicon Photonics Conference (SiPhotonics)

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