考虑感测放大器频闪信号的纳米SRAM性能良率分析模型

IEEE/ACM International Symposium on Low Power Electronics and Design Pub Date : 2011-08-01 DOI:10.1109/ISLPED.2011.5993653

J. Ryan, Sudhanshu Khanna, B. Calhoun

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引用次数: 8

摘要

本文提出了一种基于序统计量的SRAM性能良率精确分布模型，用于频闪和非频闪感放大器(SA)的实现。蒙特卡罗仿真结果验证了该模型，该模型在运行时提供了3到4个数量级的加速。通过使用该模型，我们量化了在不同类型的系统架构中使用非频闪SA的潜在好处。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An analytical model for performance yield of nanoscale SRAM accounting for the sense amplifier strobe signal

This paper presents a model for the exact distribution of performance yield in an SRAM using order statistics for strobed and non-strobed sense amplifier (SA) implementations. Monte-Carlo simulation results validate the model, which offers a speedup in runtime of 3 to 4 orders of magnitude. Using the model, we quantify the potential benefits of using a non-strobed SA in different types of system architectures.

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IEEE/ACM International Symposium on Low Power Electronics and Design

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