T. Boscke, S. Govindarajan, C. Fachmann, J. Heitmann, A. Avellan, U. Schroder, S. Kudelka, P. Kirsch, C. Krug, P. Hung, S.C. Song, B. Ju, J. Price, G. Pant, B. Gnade, W. Krautschneider, B. Lee, R. Jammy
{"title":"在50nm以下深沟槽DRAM中，用掺杂实现热稳定HfO2基MIM和MIS电容器的四方相位稳定","authors":"T. Boscke, S. Govindarajan, C. Fachmann, J. Heitmann, A. Avellan, U. Schroder, S. Kudelka, P. Kirsch, C. Krug, P. Hung, S.C. Song, B. Ju, J. Price, G. Pant, B. Gnade, W. Krautschneider, B. Lee, R. Jammy","doi":"10.1109/IEDM.2006.347011","DOIUrl":null,"url":null,"abstract":"We show for the first time that control of the crystalline phases of HfO2 by tetravalent (Si) and trivalent (Y,Gd) dopants enables significant improvements in the capacitance equivalent thickness (CET) and leakage current in capacitors targeting deep trench (DT) DRAM applications. By applying these findings, we present a MIM capacitor meeting the requirements of the 40 nm node. A CET < 1.3 nm was achieved at the deep trench DRAM thermal budget of 1000 degC","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM\",\"authors\":\"T. Boscke, S. Govindarajan, C. Fachmann, J. Heitmann, A. Avellan, U. Schroder, S. Kudelka, P. Kirsch, C. Krug, P. Hung, S.C. Song, B. Ju, J. Price, G. Pant, B. Gnade, W. Krautschneider, B. Lee, R. Jammy\",\"doi\":\"10.1109/IEDM.2006.347011\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We show for the first time that control of the crystalline phases of HfO2 by tetravalent (Si) and trivalent (Y,Gd) dopants enables significant improvements in the capacitance equivalent thickness (CET) and leakage current in capacitors targeting deep trench (DT) DRAM applications. By applying these findings, we present a MIM capacitor meeting the requirements of the 40 nm node. A CET < 1.3 nm was achieved at the deep trench DRAM thermal budget of 1000 degC\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.347011\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.347011","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM
We show for the first time that control of the crystalline phases of HfO2 by tetravalent (Si) and trivalent (Y,Gd) dopants enables significant improvements in the capacitance equivalent thickness (CET) and leakage current in capacitors targeting deep trench (DT) DRAM applications. By applying these findings, we present a MIM capacitor meeting the requirements of the 40 nm node. A CET < 1.3 nm was achieved at the deep trench DRAM thermal budget of 1000 degC
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