K. Murase, Y. Talahashi, A. Fujiwara, M. Nagase, M. Tabe
{"title":"SIMOX衬底上的硅单电子晶体管","authors":"K. Murase, Y. Talahashi, A. Fujiwara, M. Nagase, M. Tabe","doi":"10.1109/ASPDAC.1995.486389","DOIUrl":null,"url":null,"abstract":"Until recently, single-electron transistors have only been operable at very low temperatures, mostly below 1 K. By contrast, Si single-electron transistors fabricated on a SIMOX substrate by using a pattern-dependent oxidation technique show conductance oscillations even at room temperature. In addition, a single-electron memory effect is observed in specially designed Si single-electron transistors.","PeriodicalId":119232,"journal":{"name":"Proceedings of ASP-DAC'95/CHDL'95/VLSI'95 with EDA Technofair","volume":"156 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Silicon single-electron transistors on a SIMOX substrate\",\"authors\":\"K. Murase, Y. Talahashi, A. Fujiwara, M. Nagase, M. Tabe\",\"doi\":\"10.1109/ASPDAC.1995.486389\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Until recently, single-electron transistors have only been operable at very low temperatures, mostly below 1 K. By contrast, Si single-electron transistors fabricated on a SIMOX substrate by using a pattern-dependent oxidation technique show conductance oscillations even at room temperature. In addition, a single-electron memory effect is observed in specially designed Si single-electron transistors.\",\"PeriodicalId\":119232,\"journal\":{\"name\":\"Proceedings of ASP-DAC'95/CHDL'95/VLSI'95 with EDA Technofair\",\"volume\":\"156 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of ASP-DAC'95/CHDL'95/VLSI'95 with EDA Technofair\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASPDAC.1995.486389\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ASP-DAC'95/CHDL'95/VLSI'95 with EDA Technofair","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASPDAC.1995.486389","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon single-electron transistors on a SIMOX substrate
Until recently, single-electron transistors have only been operable at very low temperatures, mostly below 1 K. By contrast, Si single-electron transistors fabricated on a SIMOX substrate by using a pattern-dependent oxidation technique show conductance oscillations even at room temperature. In addition, a single-electron memory effect is observed in specially designed Si single-electron transistors.
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