{"title":"射频和中频晶体管增益控制特性的完整规范","authors":"L. A. Weldon","doi":"10.1109/TBTR2.1961.4503152","DOIUrl":null,"url":null,"abstract":"This paper describes a unique method for specifying the gain control characteristics of high frequency transistors over their entire AGC range. The forward gain control characteristics of transistors can be measured by means of a curve tracer to permit the specification, within published limits, of the high frequency power gain versus collector to emitter voltage curve. While this report describes the specification of forward gain control characteristics the system can also be used for reverse gain control specifications.","PeriodicalId":136909,"journal":{"name":"Ire Transactions on Broadcast and Television Receivers","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1961-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Complete Specification of the Gain Control Characteristics of RF And IF Transistors\",\"authors\":\"L. A. Weldon\",\"doi\":\"10.1109/TBTR2.1961.4503152\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a unique method for specifying the gain control characteristics of high frequency transistors over their entire AGC range. The forward gain control characteristics of transistors can be measured by means of a curve tracer to permit the specification, within published limits, of the high frequency power gain versus collector to emitter voltage curve. While this report describes the specification of forward gain control characteristics the system can also be used for reverse gain control specifications.\",\"PeriodicalId\":136909,\"journal\":{\"name\":\"Ire Transactions on Broadcast and Television Receivers\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1961-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ire Transactions on Broadcast and Television Receivers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TBTR2.1961.4503152\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ire Transactions on Broadcast and Television Receivers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TBTR2.1961.4503152","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Complete Specification of the Gain Control Characteristics of RF And IF Transistors
This paper describes a unique method for specifying the gain control characteristics of high frequency transistors over their entire AGC range. The forward gain control characteristics of transistors can be measured by means of a curve tracer to permit the specification, within published limits, of the high frequency power gain versus collector to emitter voltage curve. While this report describes the specification of forward gain control characteristics the system can also be used for reverse gain control specifications.
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