基于硅光子平台的CMOS兼容III-V/硅激光器集成

B. Szelag, K. Hassan, L. Adelmini, K. Ribaud, M. Roure, L. Sanchez, A. Schembri, C. Jany
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引用次数: 2

摘要

本文介绍了在CEA-LETI开发的III-V/Si混合光子平台。整体集成采用完全兼容CMOS的200mm技术,可扩展到300mm晶圆,充分利用硅光子学的大规模集成能力。III-V材料通过直接分子键集成在成熟的硅光子前端晶圆上,从而实现光源的单片集成。采用Fabry-Perot激光参考设计作为工艺验证的测试载体。最后,进行了热模拟来评估器件优化以改善其热性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS Compatible III-V/Silicon Laser Integration on Silicon Photonics Platform
In this paper we present the hybrid III-V/Si photonic platform developed in CEA-LETI. The overall integration is done in a fully CMOS compatible 200mm technology, scalable to 300 mm wafers, leveraging the large scale integration capabilities of silicon photonics. III-V material is integrated on top of a mature silicon photonic front-end wafer through direct molecular bonding enabling the monolithic integration of light sources. Fabry-Perot laser reference design is used as test vehicles for the process validation. Finally, thermal simulations have been done to evaluate device optimization to improve its thermal behavior.
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