发光二极管中电子束和伽马辐射的表征

K. Sharshar, M. Rageh, M. Ashry
{"title":"发光二极管中电子束和伽马辐射的表征","authors":"K. Sharshar, M. Rageh, M. Ashry","doi":"10.1109/ICM.2003.238009","DOIUrl":null,"url":null,"abstract":"Electron beam (1.5 MeV, 25 mA) irradiation increased the output of Light Emitting Diodes (LEDs), yellows from 23 lux up to 32 lux at 5 krads absorbed dose (low dose). Further irradiation, above 8 krads caused permanent damage associated with the attenuation of light emitted (high doses). As the same effect by gamma, in previous work, but in the increase in light intensity and current in low doses up to 1Mrads and damage occurs with 2Mrads. The I-V and C-V curves were sensitive to electron beam and gamma doses. This effect of LEDs can be successfully used for the determination of the absorbed dose in either low or high level. The range of low level was from 1 krad up to 8 krads and the high level is from 1 Mrad up to 20 Mrads or higher. Also /spl gamma/-rays doses behaved the same trend but the damage effect was more than electron beam at the same doses. The LEDs sample annealed after irradiation by electron beam and /spl gamma/-rays at room temperature for 1 year. The values of forward current reviewed to 12/spl plusmn/2% and 15/spl plusmn/2.5% from their original values. Oven annealing at different temperatures were ranging up to 250/spl deg/C. The output light intensity levels recover to around 17%, 23%, 39% and 54% of the initial values with annealing temperatures 100, 150, 200, and 250/spl deg/C respectively, in 1 H.","PeriodicalId":180690,"journal":{"name":"Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Characterization of electron beam and gamma irradiation in light emitting diodes\",\"authors\":\"K. Sharshar, M. Rageh, M. Ashry\",\"doi\":\"10.1109/ICM.2003.238009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electron beam (1.5 MeV, 25 mA) irradiation increased the output of Light Emitting Diodes (LEDs), yellows from 23 lux up to 32 lux at 5 krads absorbed dose (low dose). Further irradiation, above 8 krads caused permanent damage associated with the attenuation of light emitted (high doses). As the same effect by gamma, in previous work, but in the increase in light intensity and current in low doses up to 1Mrads and damage occurs with 2Mrads. The I-V and C-V curves were sensitive to electron beam and gamma doses. This effect of LEDs can be successfully used for the determination of the absorbed dose in either low or high level. The range of low level was from 1 krad up to 8 krads and the high level is from 1 Mrad up to 20 Mrads or higher. Also /spl gamma/-rays doses behaved the same trend but the damage effect was more than electron beam at the same doses. The LEDs sample annealed after irradiation by electron beam and /spl gamma/-rays at room temperature for 1 year. The values of forward current reviewed to 12/spl plusmn/2% and 15/spl plusmn/2.5% from their original values. Oven annealing at different temperatures were ranging up to 250/spl deg/C. The output light intensity levels recover to around 17%, 23%, 39% and 54% of the initial values with annealing temperatures 100, 150, 200, and 250/spl deg/C respectively, in 1 H.\",\"PeriodicalId\":180690,\"journal\":{\"name\":\"Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2003.238009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2003.238009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

电子束(1.5 MeV, 25 mA)照射增加了发光二极管(led)的输出,在5克拉的吸收剂量(低剂量)下,黄色从23勒克斯增加到32勒克斯。8克以上的进一步辐照造成与所发射光衰减有关的永久性损伤(高剂量)。在之前的研究中,伽马射线也有同样的效果,但在低剂量的光强和电流的增加中,达到1mrad,损伤就会发生在2mrad。I-V和C-V曲线对电子束和γ剂量敏感。led的这种效应可以成功地用于测定低水平或高水平的吸收剂量。低水平范围为1至8克,高水平范围为1至20克或更高。γ射线/spl剂量也表现出相同的趋势,但相同剂量下的损伤效应大于电子束。led样品经电子束和/spl γ射线室温辐照后退火1年。正向电流的值从其原始值调整为12/spl plusmn/2%和15/spl plusmn/2.5%。不同温度下的烤炉退火温度可达250℃/spl。当退火温度分别为100、150、200和250/spl℃时,输出光强水平在1 H内恢复到初始值的17%、23%、39%和54%左右。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of electron beam and gamma irradiation in light emitting diodes
Electron beam (1.5 MeV, 25 mA) irradiation increased the output of Light Emitting Diodes (LEDs), yellows from 23 lux up to 32 lux at 5 krads absorbed dose (low dose). Further irradiation, above 8 krads caused permanent damage associated with the attenuation of light emitted (high doses). As the same effect by gamma, in previous work, but in the increase in light intensity and current in low doses up to 1Mrads and damage occurs with 2Mrads. The I-V and C-V curves were sensitive to electron beam and gamma doses. This effect of LEDs can be successfully used for the determination of the absorbed dose in either low or high level. The range of low level was from 1 krad up to 8 krads and the high level is from 1 Mrad up to 20 Mrads or higher. Also /spl gamma/-rays doses behaved the same trend but the damage effect was more than electron beam at the same doses. The LEDs sample annealed after irradiation by electron beam and /spl gamma/-rays at room temperature for 1 year. The values of forward current reviewed to 12/spl plusmn/2% and 15/spl plusmn/2.5% from their original values. Oven annealing at different temperatures were ranging up to 250/spl deg/C. The output light intensity levels recover to around 17%, 23%, 39% and 54% of the initial values with annealing temperatures 100, 150, 200, and 250/spl deg/C respectively, in 1 H.
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