利用专用测试电路对QR-ZCS工作下的IGBT进行了分析

COM.P.EL.98. Record 6th Workshop on Computer in Power Electronics (Cat. No.98TH8358) Pub Date : 1998-07-19 DOI:10.1109/CIPE.1998.779654

J. Orozco, P. Najera, A. C. Sánchez, J. Aran

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引用次数: 0

摘要

本文介绍了IGBT在零电流开关(ZCS)条件下的行为分析，以及用于研究功率半导体的特殊测试电路的设计考虑。选择的操作模式的条件，单次射击，允许电源消耗的限制，这允许在极端的操作条件下进行不同的测试。特殊测试电路的优点允许在不同的操作条件下进行研究，例如:频率增量和存储电荷量作为OFF时间的函数。

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Analysis of the IGBT under QR-ZCS operation using a special test circuit

This work presents the behavior analysis of the IGBT under zero current switching (ZCS) conditions and the design considerations of a special test circuit used to study power semiconductors. The conditions of the operation mode selected, single-shot, allows limits of the power source consumption, which allows different tests to be carried out in extreme operating conditions. The advantages of the special test circuit allow study under different operating conditions such as: frequency increments and quantity of stored charge as a function of the OFF time.

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COM.P.EL.98. Record 6th Workshop on Computer in Power Electronics (Cat. No.98TH8358)

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