S. Allen, J. Palmour, V. Tsvetkov, S. Macko, C. Carter, C. Weitzel, K. Moore, K. Nordquist, L. Pond
{"title":"高电阻率基片上的4H-SiC MESFET, fmax /sub / 30ghz","authors":"S. Allen, J. Palmour, V. Tsvetkov, S. Macko, C. Carter, C. Weitzel, K. Moore, K. Nordquist, L. Pond","doi":"10.1109/DRC.1995.496289","DOIUrl":null,"url":null,"abstract":"MESFET's fabricated on high resistivity 4H-SiC substrates have attained an f/sub max/ of 30.5 GHz and an f/sub /spl tau// of 14.0 GHz. Both of these figures of merit are the highest ever reported for a SiC MESFET, and this is the first report of high resistivity 4H-SiC substrates. With the continued advances in bulk crystal growth, including the availability of high resistivity material, the development of two-inch substrates and the reduction of micropipe defect densities to <30 cm/sup -2/, SiC is rapidly emerging as a viable technology for high power microwave applications.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"4H-SiC MESFET's on high resistivity substrates with 30 GHz f/sub max/\",\"authors\":\"S. Allen, J. Palmour, V. Tsvetkov, S. Macko, C. Carter, C. Weitzel, K. Moore, K. Nordquist, L. Pond\",\"doi\":\"10.1109/DRC.1995.496289\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MESFET's fabricated on high resistivity 4H-SiC substrates have attained an f/sub max/ of 30.5 GHz and an f/sub /spl tau// of 14.0 GHz. Both of these figures of merit are the highest ever reported for a SiC MESFET, and this is the first report of high resistivity 4H-SiC substrates. With the continued advances in bulk crystal growth, including the availability of high resistivity material, the development of two-inch substrates and the reduction of micropipe defect densities to <30 cm/sup -2/, SiC is rapidly emerging as a viable technology for high power microwave applications.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496289\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496289","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
4H-SiC MESFET's on high resistivity substrates with 30 GHz f/sub max/
MESFET's fabricated on high resistivity 4H-SiC substrates have attained an f/sub max/ of 30.5 GHz and an f/sub /spl tau// of 14.0 GHz. Both of these figures of merit are the highest ever reported for a SiC MESFET, and this is the first report of high resistivity 4H-SiC substrates. With the continued advances in bulk crystal growth, including the availability of high resistivity material, the development of two-inch substrates and the reduction of micropipe defect densities to <30 cm/sup -2/, SiC is rapidly emerging as a viable technology for high power microwave applications.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
