甚高频混频器用平面集成肖特基器件的制备与表征

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303074

I. Mehdi, P. Siegel, M. Mazed

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引用次数: 10

摘要

今天许多毫米波混频器和倍频器仍然使用须须接触肖特基二极管作为非线性器件。为了降低NASA当前和未来太空任务中与这些关键接收器组件相关的风险和组装成本，作者开发了一种新的制造工艺，将平面肖特基二极管与混频器电路集成在一起，从而大大简化了二极管电路的组装和测试。到目前为止所获得的过程和直流结果将与200ghz的一些初步射频结果一起讨论。

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Fabrication and characterization of planar integrated Schottky devices for very high frequency mixers

Many millimeter-wave mixers and frequency multipliers today still employ a whisker contacted Schottky diode as the nonlinear device. In order to reduce the risk and assembly cost associated with these critical receiver components for NASA's present and future space missions, the authors have developed a novel fabrication procedure that integrates a planar Schottky diode with the mixer circuitry thus greatly simplifying the assembly and testing of the diode circuits. The process and DC results obtained so far will be discussed along with some preliminary RF results at 200 GHz.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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