通过改变硅衬底参数来提高半导体产量

Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium Pub Date : 1991-06-12 DOI:10.1109/UGIM.1991.148137

S. Weisbrod, D. Adelman, W. Huber

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摘要

讨论了在电流规格范围内系统地改变硅衬底参数对晶圆探头和制造良率的影响。研究了三个相关硅参数的参数分裂对器件探针产率的影响。选取的参数有:电阻率、间隙氧含量和带a的p型硅片的背面条件

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Improving semiconductor yields by varying silicon substrate parameters

An experiment to determine the impact on wafer probe and fabrication yields of systematically varying silicon substrate parameters within current specification ranges is discussed. The effect of parametric splits of three relevant silicon parameters on device probe yields were investigated. The parameters that were chosen were resistivity, interstitial oxygen content, and backside condition of p-type silicon wafers with a

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Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium

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