采用Ni-Cr共掺杂制备低相变温度VO2薄膜

Q. He, Dong-ping Zhang, Ying Huang, Y. Yang, Huan Guan, Jingcheng Jin, P. Fan
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引用次数: 1

摘要

提出了一种新的掺杂制备VO2薄膜的方法,可以显著调节过渡相温度。采用反应脉冲磁控溅射的方法,在Si衬底上沉积了重ni - cr共掺杂VO2薄膜超薄层。利用x射线衍射仪、紫外/可见光/近红外分光光度计和薄膜相变测量系统分别表征了VO2薄膜的微观结构、光学性能和相变性能。结果表明,通过控制不同的掺杂时间,可以将VO2薄膜的过渡相温度从53℃降低到30℃。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Employing Ni-Cr co-doping to prepare low phase transition temperature VO2 film
A new doping approach of preparing VO2 film was proposed to significantly tune the transition phase temperature. The heavy Ni-Cr-codoped VO2 film ultra-thin layer was deposited on the pure VO2 film by reactive pulsed magnetron sputtering on the Si substrate followed with annealing. The microstructure, optical and phase transition performance of VO2 films were characterized via X-ray diffraction, UV/VIS/NIR spectrophotometer and thin film phase transition measurement system, respectively. The result indicates that the transition phase temperature of VO2 film can be reduced from 53 ℃ to 30 ℃ by easily controlling different doping time.
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