{"title":"用于高压功率开关的GaAs肖特基栅双极晶体管","authors":"C. Johnson, M. Hossin, A. O'Neill","doi":"10.1109/ESSDERC.1997.194487","DOIUrl":null,"url":null,"abstract":"A GaAs alternative to the Si IGBT, employing an implanted lateral channel in place of the usual MOSFET inversion channel, is proposed. Design strategies for both Si IGBT and GaAs SGBT are investigated and applied in the design of optimised unit cells. The optimised structures are compared by means of electrothermal and transient simulation. The GaAs device displays improved latch-up tolerance, a greater current handling capability, faster switching with a reduced tail current and useable performance at temperatures in excess of 300C.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"126 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaAs Schottky Gate bipolar transistors for high voltage power switching applications\",\"authors\":\"C. Johnson, M. Hossin, A. O'Neill\",\"doi\":\"10.1109/ESSDERC.1997.194487\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A GaAs alternative to the Si IGBT, employing an implanted lateral channel in place of the usual MOSFET inversion channel, is proposed. Design strategies for both Si IGBT and GaAs SGBT are investigated and applied in the design of optimised unit cells. The optimised structures are compared by means of electrothermal and transient simulation. The GaAs device displays improved latch-up tolerance, a greater current handling capability, faster switching with a reduced tail current and useable performance at temperatures in excess of 300C.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"126 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194487\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194487","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs Schottky Gate bipolar transistors for high voltage power switching applications
A GaAs alternative to the Si IGBT, employing an implanted lateral channel in place of the usual MOSFET inversion channel, is proposed. Design strategies for both Si IGBT and GaAs SGBT are investigated and applied in the design of optimised unit cells. The optimised structures are compared by means of electrothermal and transient simulation. The GaAs device displays improved latch-up tolerance, a greater current handling capability, faster switching with a reduced tail current and useable performance at temperatures in excess of 300C.
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