Ge/Si电调谐VIS/SWIR光电探测器

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9673998

A. Ballabio, A. De Iacovo, J. Frigerio, Andrea Fabbri, G. Isella, L. Colace

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引用次数: 0

摘要

我们报道了在Si p-n结上生长的外延Ge-on-Si双带光电探测器，形成两个背靠背连接的光电二极管。该器件的响应性可以通过外部偏置进行调谐，以覆盖可见光和近红外光谱区域内的波长。

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Ge/Si electrically tunable VIS/SWIR photodetector

We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two photodiodes connected in a back-to-back configuration. The device responsivity can be tuned, with an external bias, to cover wavelengths within the visible and near-infrared spectral regions.

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来源期刊

2021 IEEE 17th International Conference on Group IV Photonics (GFP)

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