纳米管是高迁移率半导体

Structural and Electronic Properties of Molecular Nanostructures. XVI International Winterschool on Electronic Properties of Novel Materials Pub Date : 2002-10-02 DOI:10.1063/1.1514114

T. Dürkop, T. Brintlinger, M. Fuhrer

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引用次数: 15

摘要

报道了超长(20微米)CVD纳米管的电子输运特性。在该装置中，输运主要由室温下的本征散射过程控制。室温空穴迁移率为20,000 cm2/Vs，超过了技术上相关的半导体。迁移率随温度的降低而增加，估计在470 mK时大于180,000 cm2/Vs。

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Nanotubes are High Mobility Semiconductors

The electron transport properties of a very long (20 micron) CVD‐grown nanotube are reported. In this device the transport is dominated by intrinsic scattering processes at room temperature. The room temperature hole mobility is 20,000 cm2/Vs, exceeding that of technologically‐relevant semiconductors. The mobility increases with decreasing temperature, and is estimated to be greater than 180,000 cm2/Vs at 470 mK.

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Structural and Electronic Properties of Molecular Nanostructures. XVI International Winterschool on Electronic Properties of Novel Materials

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