具有扭结效应和(或)并联传导的mesfet和hemt中的微波噪声系数

1992 IEEE Microwave Symposium Digest MTT-S Pub Date : 1992-06-01 DOI:10.1109/MWSYM.1992.187969

J. Reynoso‐Hernández, L. Escotte, R. Plana, J. Graffeuil

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引用次数: 5

摘要

作者考虑了mesfet和hemt(高电子迁移率晶体管)中常见的扭结效应和hemt中有时观察到的平行传导对微波噪声系数的影响。研究发现，弯折效应主要影响MESFET的噪声，并联传导影响HEMT的噪声，特别是在大漏极电流下。概述了低噪声放大器的最佳偏置条件的结果。

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Microwave noise figure in MESFETs and HEMTs with kink-effect and (or) parallel conduction

The authors consider the influence of the kink effect often noticed in MESFETs and HEMTs (high electron mobility transistors) and the parallel conduction sometimes observed in HEMTs on the microwave noise figure. It is found that the kink effect mostly affects MESFET noise and that parallel conduction affects HEMT noise, especially when operated at large drain current. Consequences for optimal bias conditions for low noise amplifiers are outlined.<>

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1992 IEEE Microwave Symposium Digest MTT-S

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