{"title":"双极集成电路中防止电迁移的系统方法","authors":"J. Dunkley, R. Metzler","doi":"10.1109/BIPOL.1988.51086","DOIUrl":null,"url":null,"abstract":"A rigorous statistical technique is presented for properly modeling the design rules for the maximum current density permitted to pass through the interconnecting metal of an integrated circuit. The electromigration model includes consideration of the circuit's overall manufacturing and systems environment. Process variables, assembly variables, and variations in the system's electrical and thermal environment are statistically accounted for when determining current density limits in the metallization. This assures that the reliability requirements of the circuit are met.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A systems approach to electromigration prevention in bipolar integrated circuits\",\"authors\":\"J. Dunkley, R. Metzler\",\"doi\":\"10.1109/BIPOL.1988.51086\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A rigorous statistical technique is presented for properly modeling the design rules for the maximum current density permitted to pass through the interconnecting metal of an integrated circuit. The electromigration model includes consideration of the circuit's overall manufacturing and systems environment. Process variables, assembly variables, and variations in the system's electrical and thermal environment are statistically accounted for when determining current density limits in the metallization. This assures that the reliability requirements of the circuit are met.<<ETX>>\",\"PeriodicalId\":302949,\"journal\":{\"name\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1988.51086\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A systems approach to electromigration prevention in bipolar integrated circuits
A rigorous statistical technique is presented for properly modeling the design rules for the maximum current density permitted to pass through the interconnecting metal of an integrated circuit. The electromigration model includes consideration of the circuit's overall manufacturing and systems environment. Process variables, assembly variables, and variations in the system's electrical and thermal environment are statistically accounted for when determining current density limits in the metallization. This assures that the reliability requirements of the circuit are met.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
