{"title":"宽带低噪声双栅极场效应管分布放大器","authors":"W. Thompson","doi":"10.1109/MCS.1989.37252","DOIUrl":null,"url":null,"abstract":"A 2 to 18 GHz monolithic GaAs low-noise distributed amplifier with 10 dB nominal gain was designed and built using the standard Texas Instrument GaAs foundry process. This process incorporates ground vias, metal-insulator-metal (MIM) capacitors and air bridges. The amplifier uses 0.5- mu m-gate ion-implanted dual-gate FETs (DGFETs). The noise figure is less than 5.7 dB over the 2 to 18 GHz band and less than 4.0 dB from 3 to 13 GHz. The DGFET amplifier provides gain control capability; with 5 V and 60 mA operating bias it provides 10-dB nominal gain, input return loss better than 10 dB, and output return loss better than 8 dB. Lower power consumption was demonstrated at 5 V and 30 mA. With this reduced bias the nominal gain drops to 8 dB and the noise figure degrades by 0.3 dB. Increasing the bias to 7 V and 90 mA increases the nominal gain to 11 dB while degrading the noise figure by 0.3 dB. This increased bias gives the amplifier medium power capability, with a 1-dB gain compression power output of 18 dBm at 18 GHz. This increases to 19 dBm for frequencies below 15 GHz.<<ETX>>","PeriodicalId":377911,"journal":{"name":"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A broadband low noise dual gate FET distributed amplifier\",\"authors\":\"W. Thompson\",\"doi\":\"10.1109/MCS.1989.37252\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2 to 18 GHz monolithic GaAs low-noise distributed amplifier with 10 dB nominal gain was designed and built using the standard Texas Instrument GaAs foundry process. This process incorporates ground vias, metal-insulator-metal (MIM) capacitors and air bridges. The amplifier uses 0.5- mu m-gate ion-implanted dual-gate FETs (DGFETs). The noise figure is less than 5.7 dB over the 2 to 18 GHz band and less than 4.0 dB from 3 to 13 GHz. The DGFET amplifier provides gain control capability; with 5 V and 60 mA operating bias it provides 10-dB nominal gain, input return loss better than 10 dB, and output return loss better than 8 dB. Lower power consumption was demonstrated at 5 V and 30 mA. With this reduced bias the nominal gain drops to 8 dB and the noise figure degrades by 0.3 dB. Increasing the bias to 7 V and 90 mA increases the nominal gain to 11 dB while degrading the noise figure by 0.3 dB. This increased bias gives the amplifier medium power capability, with a 1-dB gain compression power output of 18 dBm at 18 GHz. This increases to 19 dBm for frequencies below 15 GHz.<<ETX>>\",\"PeriodicalId\":377911,\"journal\":{\"name\":\"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1989.37252\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1989.37252","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A broadband low noise dual gate FET distributed amplifier
A 2 to 18 GHz monolithic GaAs low-noise distributed amplifier with 10 dB nominal gain was designed and built using the standard Texas Instrument GaAs foundry process. This process incorporates ground vias, metal-insulator-metal (MIM) capacitors and air bridges. The amplifier uses 0.5- mu m-gate ion-implanted dual-gate FETs (DGFETs). The noise figure is less than 5.7 dB over the 2 to 18 GHz band and less than 4.0 dB from 3 to 13 GHz. The DGFET amplifier provides gain control capability; with 5 V and 60 mA operating bias it provides 10-dB nominal gain, input return loss better than 10 dB, and output return loss better than 8 dB. Lower power consumption was demonstrated at 5 V and 30 mA. With this reduced bias the nominal gain drops to 8 dB and the noise figure degrades by 0.3 dB. Increasing the bias to 7 V and 90 mA increases the nominal gain to 11 dB while degrading the noise figure by 0.3 dB. This increased bias gives the amplifier medium power capability, with a 1-dB gain compression power output of 18 dBm at 18 GHz. This increases to 19 dBm for frequencies below 15 GHz.<>