宽带低噪声双栅极场效应管分布放大器

W. Thompson
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引用次数: 6

摘要

采用美国德州仪器公司的标准GaAs铸造工艺,设计并制造了一个标称增益为10 dB的2 ~ 18 GHz单片GaAs低噪声分布式放大器。该工艺包括接地过孔,金属-绝缘体-金属(MIM)电容器和空气桥。放大器采用0.5 μ m栅极离子注入双栅极场效应管(dgfet)。2 ~ 18ghz频段噪声系数小于5.7 dB, 3 ~ 13ghz频段噪声系数小于4.0 dB。DGFET放大器提供增益控制能力;在5v和60ma工作偏置下,提供10db标称增益,输入回波损耗优于10db,输出回波损耗优于8db。在5 V和30 mA下,功耗更低。通过减小偏置,标称增益降至8 dB,噪声系数降低0.3 dB。将偏置增加到7 V和90 mA,标称增益增加到11 dB,同时噪声系数降低0.3 dB。这种增加的偏置使放大器具有中等功率能力,在18 GHz时具有18 dBm的1 db增益压缩功率输出。对于低于15 GHz的频率,这一数字增加到19 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A broadband low noise dual gate FET distributed amplifier
A 2 to 18 GHz monolithic GaAs low-noise distributed amplifier with 10 dB nominal gain was designed and built using the standard Texas Instrument GaAs foundry process. This process incorporates ground vias, metal-insulator-metal (MIM) capacitors and air bridges. The amplifier uses 0.5- mu m-gate ion-implanted dual-gate FETs (DGFETs). The noise figure is less than 5.7 dB over the 2 to 18 GHz band and less than 4.0 dB from 3 to 13 GHz. The DGFET amplifier provides gain control capability; with 5 V and 60 mA operating bias it provides 10-dB nominal gain, input return loss better than 10 dB, and output return loss better than 8 dB. Lower power consumption was demonstrated at 5 V and 30 mA. With this reduced bias the nominal gain drops to 8 dB and the noise figure degrades by 0.3 dB. Increasing the bias to 7 V and 90 mA increases the nominal gain to 11 dB while degrading the noise figure by 0.3 dB. This increased bias gives the amplifier medium power capability, with a 1-dB gain compression power output of 18 dBm at 18 GHz. This increases to 19 dBm for frequencies below 15 GHz.<>
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