一种软错误和变化感知缓存体系结构

L. D. Hung, M. Goshima, S. Sakai
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引用次数: 13

摘要

随着SRAM器件的小型化,变化诱导的缺陷存储细胞的数量迅速增加。结合ECC,特别是SECDED,与冗余技术可以有效地容忍大量的缺陷。虽然SECDED可以修复块中有缺陷的细胞,但块容易受到软错误的影响。本文提出了一种原始的软错误和变化感知缓存体系结构SEVA。SEVA利用SECDED来容忍变化引起的缺陷,同时保持对软错误的高弹性。每个SECDED块都维护有关缺陷和数据污染的信息。SEVA只允许干净的数据存储在缓存的有缺陷(但仍然可用)的块中。在有缺陷的块中发生的错误可以被检测到,并且可以从内存层次结构的较低级别获得正确的数据。SEVA以较低的开销提高了产量和可靠性
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SEVA: A Soft-Error- and Variation-Aware Cache Architecture
As SRAM devices are scaled down, the number of variation-induced defective memory cells increases rapidly. Combination of ECC, particularly SECDED, with a redundancy technique can effectively tolerate a high number of defects. While SECDED can repair a defective cell in a block, the block becomes vulnerable to soft errors. This paper proposes SEVA, an original soft-error- and variation-aware cache architecture. SEVA exploits SECDED to tolerate variation-induced defects while preserving high resilience against soft errors. Information about the defectiveness and data dirtiness is maintained for each SECDED block. SEVA allows only the clean data to be stored in defective (but still usable) blocks of a cache. An error occurring in a defective block can be detected and the correct data can be obtained from the lower level of the memory hierarchy. SEVA improves yield and reliability with low overheads
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