0.35um自对准与准自对准双极多晶硅晶体管的性能比较

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194453

L. Ailloud, J. de Pontcharra, G. Bartoletti, J. Kirtsch, G. Auvert, A. Chantre

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引用次数: 2

摘要

本文报道了在同一晶圆上制备的自对准(SA)和准自对准(QSA)双极多晶硅晶体管的性能比较。提出了一种形成QSA器件链路基的新技术，使其具有良好的静态和动态性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A performance comparison between 0.35um self-aligned and quasi-self-aligned double-polysilicon bipolar transistors

This paper reports a performance comparison between self-aligned (SA) and quasi-self-aligned (QSA) double-polysilicon bipolar transistors fabricated on the same wafer. A novel technique for forming the link base of QSA devices has been developed, which allows to obtain good static and dynamic performances.

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27th European Solid-State Device Research Conference

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