双soi pmosfet的辐射诱导降解机制

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745722

Yang Huang, Fanyu Liu, Binhong Li, Bo Li, Jiantou Gao, Lei Wang, Xiaohui Su, Hainan Liu, Zhengsheng Han, Jiajun Luo

{"title":"双soi pmosfet的辐射诱导降解机制","authors":"Yang Huang, Fanyu Liu, Binhong Li, Bo Li, Jiantou Gao, Lei Wang, Xiaohui Su, Hainan Liu, Zhengsheng Han, Jiajun Luo","doi":"10.1109/radecs47380.2019.9745722","DOIUrl":null,"url":null,"abstract":"A significant degradation of drain current in Double-SOI pMOSFET is observed after irradiation. The degradation mechanism is analyzed by extracting the related parameters from Y-function. Impact of negative SOI bias on parameter degradation is investigated.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Radiation-induced Degradation Mechanism in Double-SOI pMOSFETs\",\"authors\":\"Yang Huang, Fanyu Liu, Binhong Li, Bo Li, Jiantou Gao, Lei Wang, Xiaohui Su, Hainan Liu, Zhengsheng Han, Jiajun Luo\",\"doi\":\"10.1109/radecs47380.2019.9745722\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A significant degradation of drain current in Double-SOI pMOSFET is observed after irradiation. The degradation mechanism is analyzed by extracting the related parameters from Y-function. Impact of negative SOI bias on parameter degradation is investigated.\",\"PeriodicalId\":269018,\"journal\":{\"name\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/radecs47380.2019.9745722\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/radecs47380.2019.9745722","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

辐照后，双soi pMOSFET的漏极电流显著下降。从y函数中提取相关参数，分析了退化机理。研究了负SOI偏置对参数退化的影响。

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Radiation-induced Degradation Mechanism in Double-SOI pMOSFETs

A significant degradation of drain current in Double-SOI pMOSFET is observed after irradiation. The degradation mechanism is analyzed by extracting the related parameters from Y-function. Impact of negative SOI bias on parameter degradation is investigated.

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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