S. Nakao, H. Mastubara, A. Yamaguchi, J. Sakaki, A. Nakae, S. Tatsu, K. Tsujita
{"title":"抗蚀性CD预测的简单方法","authors":"S. Nakao, H. Mastubara, A. Yamaguchi, J. Sakaki, A. Nakae, S. Tatsu, K. Tsujita","doi":"10.1109/IMNC.1998.729978","DOIUrl":null,"url":null,"abstract":"A simple calculation method which predicts resist CD with high precision is proposed. To simplify the formalism, image intensity profile and dissolution rate of resist are approximated with a linear and an exponential function, respectively. With this simplification, the resist edge displacement is expressed with a primitive formula. The method is evaluated by comparing experiments and calculations, and the effectiveness of the method is confirmed.","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simple Method For Resist CD Prediction\",\"authors\":\"S. Nakao, H. Mastubara, A. Yamaguchi, J. Sakaki, A. Nakae, S. Tatsu, K. Tsujita\",\"doi\":\"10.1109/IMNC.1998.729978\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple calculation method which predicts resist CD with high precision is proposed. To simplify the formalism, image intensity profile and dissolution rate of resist are approximated with a linear and an exponential function, respectively. With this simplification, the resist edge displacement is expressed with a primitive formula. The method is evaluated by comparing experiments and calculations, and the effectiveness of the method is confirmed.\",\"PeriodicalId\":356908,\"journal\":{\"name\":\"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-07-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.1998.729978\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.1998.729978","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A simple calculation method which predicts resist CD with high precision is proposed. To simplify the formalism, image intensity profile and dissolution rate of resist are approximated with a linear and an exponential function, respectively. With this simplification, the resist edge displacement is expressed with a primitive formula. The method is evaluated by comparing experiments and calculations, and the effectiveness of the method is confirmed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
