以200 ghz SiGe HBT和80纳米栅极CMOS为特色的SiGe BiCMOS技术改进方向

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269182

T. Hashimoto, Y. Nonaka, T. Tominari, H. Fujiwara, K. Tokunaga, M. Arai, S. Wada, T. Udo, M. Seto, M. Miura, H. Shimamoto, K. Washio, H. Tomioka

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引用次数: 32

摘要

利用LP-CVD技术成功集成了200 GHz f/sub T/ SiGe HBTs和80 nm栅极CMOS，实现了选择性SiGe外延生长。抑制基极电阻使我们能够实现227 GHz的f/sub MAX/，对应于201 GHz的f/sub T/。在ic =1.2 mA时，A/sub / E/=0.15/spl倍/0.7 /spl mu/m/sup / 2/的压缩HBTs实现了ECL环形振荡器门延迟5.3 ps。研究了发射极宽度缩放效应对结温和器件性能的影响。低热预算HBT工艺保持与0.13 /spl mu/m大型RF ic平台的完全兼容。

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Direction to improve SiGe BiCMOS technology featuring 200-GHz SiGe HBT and 80-nm gate CMOS

200 GHz f/sub T/ SiGe HBTs and 80 nm gate CMOS were successfully integrated using the LP-CVD technique for selective SiGe epitaxial growth. Suppressing base resistance enabled us to achieve f/sub MAX/ of 227 GHz, corresponding to f/sub T/ of 201 GHz. Shrunk HBTs of A/sub E/=0.15/spl times/0.7 /spl mu/m/sup 2/ achieved ECL ring oscillator gate delay of 5.3 ps at Ics=1.2 mA. Self-heating effects on junction temperature and device performance were investigated with an emitter-width scaling effect. A low thermal budget HBT process sustains full compatibility with 0.13 /spl mu/m platforms for large scaled RF ICs.

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IEEE International Electron Devices Meeting 2003

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