基于InGaN基led的测定方法的发展，在当前的测试结果中倾向于早期退化

2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE) Pub Date : 2018-09-01 DOI:10.1109/APEDE.2018.8542262

I. Frolov, O. Radaev, V. Sergeev

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引用次数: 0

摘要

基于InGaN的低功耗商用发光二极管在25 a /cm2的恒定电流下测试了7,000小时。本文提出了一种基于阈值电流区域测量的电学和电光特性来判断led是否有早期退化的方法。可以确定的是，对于初始量子效率值较低的led，降解率较高。

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Development of the Method of Determining of InGaN Based Leds Tended to Early Degradation on the Results of Current Tests

Low-power commercial InGaN based light-emitting diodes were tested at a constant current of 25 A/cm2 for 7,000 hours. A methode for determining of LEDs tended to early degradation based on electrical and electro-optical characteristics measured in the threshold current region has been developed. It is determined that the rate of degradation is higher for LEDs with low values of the initial quantum efficiency.

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2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)

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