超频SSD:安全运行超出闪存芯片I/O时钟规格

Kai Zhao, K. S. Venkataraman, Xuebin Zhang, Jiangpeng Li, Ning Zheng, Tong Zhang
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引用次数: 9

摘要

本文提出了一种设计策略,可以在不牺牲存储可靠性的情况下,在固态硬盘(ssd)中积极使用闪存芯片I/O链路超频。NAND闪存的逐渐损耗和工艺变化使得固态硬盘中的最坏情况纠错码(ECC)在大多数时候都没有得到充分利用。这项工作提出了机会性地利用未充分利用的纠错强度来允许容易出错的闪存I/O链路超频。本文对其基本原理和关键设计问题进行了阐述和研究,并通过硬件实验和系统仿真验证了其潜在的有效性。使用I/O规格为166MBps的sub-22nm NAND闪存芯片,我们进行了大量的实验,并表明所提出的设计策略可以使ssd安全运行,易出错的I/O链路运行在275MBps。跟踪驱动的SSD对各种工作负载跟踪的模拟表明,系统读取响应时间可以减少20%以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Over-clocked SSD: Safely running beyond flash memory chip I/O clock specs
This paper presents a design strategy that enables aggressive use of flash memory chip I/O link over-clocking in solid-state drives (SSDs) without sacrificing storage reliability. The gradual wear-out and process variation of NAND flash memory makes the worst-case oriented error correction code (ECC) in SSDs largely under-utilized most of the time. This work proposes to opportunistically leverage under-utilized error correction strength to allow error-prone flash memory I/O link over-clocking. Its rationale and key design issues are presented and studied in this paper, and its potential effectiveness has been verified through hardware experiments and system simulations. Using sub-22nm NAND flash memory chips with I/O specs of 166MBps, we carried out extensive experiments and show that the proposed design strategy can enable SSDs safely operate with error-prone I/O link running at 275MBps. Trace-driven SSD simulations over a variety of workload traces show the system read response time can be reduced by over 20%.
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