Kai Zhao, K. S. Venkataraman, Xuebin Zhang, Jiangpeng Li, Ning Zheng, Tong Zhang
{"title":"超频SSD:安全运行超出闪存芯片I/O时钟规格","authors":"Kai Zhao, K. S. Venkataraman, Xuebin Zhang, Jiangpeng Li, Ning Zheng, Tong Zhang","doi":"10.1109/HPCA.2014.6835962","DOIUrl":null,"url":null,"abstract":"This paper presents a design strategy that enables aggressive use of flash memory chip I/O link over-clocking in solid-state drives (SSDs) without sacrificing storage reliability. The gradual wear-out and process variation of NAND flash memory makes the worst-case oriented error correction code (ECC) in SSDs largely under-utilized most of the time. This work proposes to opportunistically leverage under-utilized error correction strength to allow error-prone flash memory I/O link over-clocking. Its rationale and key design issues are presented and studied in this paper, and its potential effectiveness has been verified through hardware experiments and system simulations. Using sub-22nm NAND flash memory chips with I/O specs of 166MBps, we carried out extensive experiments and show that the proposed design strategy can enable SSDs safely operate with error-prone I/O link running at 275MBps. Trace-driven SSD simulations over a variety of workload traces show the system read response time can be reduced by over 20%.","PeriodicalId":164587,"journal":{"name":"2014 IEEE 20th International Symposium on High Performance Computer Architecture (HPCA)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Over-clocked SSD: Safely running beyond flash memory chip I/O clock specs\",\"authors\":\"Kai Zhao, K. S. Venkataraman, Xuebin Zhang, Jiangpeng Li, Ning Zheng, Tong Zhang\",\"doi\":\"10.1109/HPCA.2014.6835962\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a design strategy that enables aggressive use of flash memory chip I/O link over-clocking in solid-state drives (SSDs) without sacrificing storage reliability. The gradual wear-out and process variation of NAND flash memory makes the worst-case oriented error correction code (ECC) in SSDs largely under-utilized most of the time. This work proposes to opportunistically leverage under-utilized error correction strength to allow error-prone flash memory I/O link over-clocking. Its rationale and key design issues are presented and studied in this paper, and its potential effectiveness has been verified through hardware experiments and system simulations. Using sub-22nm NAND flash memory chips with I/O specs of 166MBps, we carried out extensive experiments and show that the proposed design strategy can enable SSDs safely operate with error-prone I/O link running at 275MBps. Trace-driven SSD simulations over a variety of workload traces show the system read response time can be reduced by over 20%.\",\"PeriodicalId\":164587,\"journal\":{\"name\":\"2014 IEEE 20th International Symposium on High Performance Computer Architecture (HPCA)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 20th International Symposium on High Performance Computer Architecture (HPCA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HPCA.2014.6835962\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 20th International Symposium on High Performance Computer Architecture (HPCA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HPCA.2014.6835962","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a design strategy that enables aggressive use of flash memory chip I/O link over-clocking in solid-state drives (SSDs) without sacrificing storage reliability. The gradual wear-out and process variation of NAND flash memory makes the worst-case oriented error correction code (ECC) in SSDs largely under-utilized most of the time. This work proposes to opportunistically leverage under-utilized error correction strength to allow error-prone flash memory I/O link over-clocking. Its rationale and key design issues are presented and studied in this paper, and its potential effectiveness has been verified through hardware experiments and system simulations. Using sub-22nm NAND flash memory chips with I/O specs of 166MBps, we carried out extensive experiments and show that the proposed design strategy can enable SSDs safely operate with error-prone I/O link running at 275MBps. Trace-driven SSD simulations over a variety of workload traces show the system read response time can be reduced by over 20%.