{"title":"考虑片内温度变化的改进双电压设计","authors":"J. Gu, G. Qu, Lin Yuan","doi":"10.1109/ICCD.2010.5647619","DOIUrl":null,"url":null,"abstract":"dual-Vt technology is effective in leakage reduction and has been implemented in industry EDA tools. However, on-chip temperature is regarded as uniformly distributed over the chip, with a pre-assumed value. This assumption does not hold for designs in the deep sub-micron domain as on-chip temperature variation becomes more and more significant. As a result, treating temperature as a constant will either lead to non-optimal design in terms of leakage or unreliable circuit due to potential hot spots that have temperature higher than expected. In this paper, we propose a temperature-aware approach that leverages the on-chip temperature variation and takes into account the coupling effects between leakage and temperature to enhance the leakage reduction of any dual-Vt assignment algorithm. We synthesize and implement Opencore benchmarks using Synopsys tools and TSMC's 65nm low power dual-Vt library. The results show that we are able to improve the performance of a state-of-the-art dual Vt algorithm by an average of 11.2% in leakage saving, a more than 1.4°C drop of peak temperature, and a significant reduction of cells in hot regions without timing failure.","PeriodicalId":182350,"journal":{"name":"2010 IEEE International Conference on Computer Design","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Enhancing dual-Vt design with consideration of on-chip temperature variation\",\"authors\":\"J. Gu, G. Qu, Lin Yuan\",\"doi\":\"10.1109/ICCD.2010.5647619\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"dual-Vt technology is effective in leakage reduction and has been implemented in industry EDA tools. However, on-chip temperature is regarded as uniformly distributed over the chip, with a pre-assumed value. This assumption does not hold for designs in the deep sub-micron domain as on-chip temperature variation becomes more and more significant. As a result, treating temperature as a constant will either lead to non-optimal design in terms of leakage or unreliable circuit due to potential hot spots that have temperature higher than expected. In this paper, we propose a temperature-aware approach that leverages the on-chip temperature variation and takes into account the coupling effects between leakage and temperature to enhance the leakage reduction of any dual-Vt assignment algorithm. We synthesize and implement Opencore benchmarks using Synopsys tools and TSMC's 65nm low power dual-Vt library. The results show that we are able to improve the performance of a state-of-the-art dual Vt algorithm by an average of 11.2% in leakage saving, a more than 1.4°C drop of peak temperature, and a significant reduction of cells in hot regions without timing failure.\",\"PeriodicalId\":182350,\"journal\":{\"name\":\"2010 IEEE International Conference on Computer Design\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Conference on Computer Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCD.2010.5647619\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Computer Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD.2010.5647619","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhancing dual-Vt design with consideration of on-chip temperature variation
dual-Vt technology is effective in leakage reduction and has been implemented in industry EDA tools. However, on-chip temperature is regarded as uniformly distributed over the chip, with a pre-assumed value. This assumption does not hold for designs in the deep sub-micron domain as on-chip temperature variation becomes more and more significant. As a result, treating temperature as a constant will either lead to non-optimal design in terms of leakage or unreliable circuit due to potential hot spots that have temperature higher than expected. In this paper, we propose a temperature-aware approach that leverages the on-chip temperature variation and takes into account the coupling effects between leakage and temperature to enhance the leakage reduction of any dual-Vt assignment algorithm. We synthesize and implement Opencore benchmarks using Synopsys tools and TSMC's 65nm low power dual-Vt library. The results show that we are able to improve the performance of a state-of-the-art dual Vt algorithm by an average of 11.2% in leakage saving, a more than 1.4°C drop of peak temperature, and a significant reduction of cells in hot regions without timing failure.