记忆电阻器在多比特存储和模式学习方面的潜力

N. Taherinejad, Sai Manoj Pudukotai Dinakarrao, A. Jantsch
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引用次数: 19

摘要

忆阻器是一种双端器件,称为第四元件,其特点是电阻随电荷(电流)的变化而变化。这导致了许多有趣的特性,包括对过去状态的记忆,在其抵抗中表现出来。与传统存储器相比,忆阻器的面积和功耗更小,这使得它们更适合需要大内存的应用。在本文中,我们探讨了忆阻器的一个独特特性,它通过允许在单个忆阻器中存储多比特数据来扩展其适用性。它们存储多比特模式的能力将通过一个简化的证明和模拟来展示。这一特性对许多应用都是有利的。本文特别讨论了它在模式学习应用中的优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Memristors' Potential for Multi-bit Storage and Pattern Learning
Memristor is a two-terminal device, termed as fourth element, and characterized by a varying resistance depending on the charge (current) flown through it. This leads to many interesting characteristics, including a memory of its past states, demonstrated in its resistance. Smaller area and power consumed by memristors compared to conventional memories makes them a more suitable choice for applications needing large memory. In this paper we explore one of the unique properties of memristors which extends their suitability by allowing storage of multi-bit data in a single memristor. Their ability of storing multi-bit patterns will be shown via a simplified proof and simulations. This characteristic can be advantageous for many applications. In this paper particularly, we briefly discuss its advantages in pattern learning applications.
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