模拟N-MOS晶体管老化后降压变换器传导EMI的演化

M. Tlig, J. Ben Hadj Slama
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引用次数: 0

摘要

本文提出了一种基于MOSFET的DC / DC变换器基于加速老化时间的传导电磁干扰变化(ACEMI)建模方法。通过SPICE MOSFET模型的仿真,确定了ACEMI与阈值电压变化(AVtn)之间的关系。通过文献研究和测量,我们确定了老化时间(T)表示AVth的方程,然后将仿真结果与实验结果进行比较,以验证所提出的ACEMI与老化时间(T)的关系模型。该模型用于预测功率MOSFET降压变换器产生的ACEMI。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling the evolution of conducted EMI of a buck converter after N-MOS transistor aging
In this paper, we propose a method to model the Conducted ElectroMagnetic Interference variation (ACEMI) generated by a DC / DC converter based on a MOSFET according to an accelerated aging time. A relation between the ACEMI and the threshold voltage variation (AVtn) is determined by simulation, using a SPICE MOSFET model. Through the literature researches and the measurements we determine the equation that express the AVth according the aging time (T). Thereafter, a comparison between the simulation results and the experimental results are presented in order to validate the proposed model that relates the ACEMI to the aging time (T). This model has been developed to predict the ACEMI generated by a buck converter using a power MOSFET.
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